Cryogenic Ferroelectric Memcapacitor PhD

Investigate ferroelectric memcapacitors at cryogenic temperatures through nanofabrication and electrical characterization in Sherbrooke, Canada. Explore devices for semiconductor qubit control and scalable quantum electronics.

This full-time PhD is based mainly at Université de Sherbrooke's 3IT and Institut Quantique. The project focuses on HfZrO2 devices, superconducting electrodes, deep-cryogenic measurements, and reliability. Research covers electrical engineering and materials engineering, with experimental work spanning device fabrication, characterization, and qubit-control applications.

Key Responsibilities:

• Design cryogenic-compatible HfZrO2 memcapacitors and crossbar arrays
• Integrate TiN and NbN superconducting electrodes
• Perform lithography, dry etching, and passivation processes
• Characterize devices using AFM, SEM, and TEM
• Measure hysteresis, retention, endurance, programmability, and noise

Requirements:

• Master's degree or equivalent in relevant engineering
• Specialization in nanotechnology or materials science
• Knowledge of nanofabrication and cryogenic measurements
• Strong interest in cleanroom experimentation and interdisciplinary research
• Fluency in French and English

Develop cryogenic memcapacitor expertise while assessing superconducting interconnects for semiconductor qubit control and scalable quantum processors.